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IRG4PC50UDPBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRG4PC50UDPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Download  10 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4PC50UDPBF Datasheet(HTML) 2 Page - International Rectifier

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IRG4PC50UDPbF
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www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
----
180 270
IC = 27A
Qge
Gate - Emitter Charge (turn-on)
----
25
38
nC
VCC = 400V
See Fig. 8
Qgc
Gate - Collector Charge (turn-on)
----
61
90
VGE = 15V
td(on)
Turn-On Delay Time
----
46
----
TJ = 25°C
tr
Rise Time
----
25
----
ns
IC = 27A, VCC = 480V
td(off)
Turn-Off Delay Time
----
140 230
VGE = 15V, RG = 5.0Ω
tf
FallTime
----
74
110
Energy losses include "tail" and
Eon
Turn-On Switching Loss
---- 0.99 ----
diode reverse recovery.
Eoff
Turn-Off Switching Loss
---- 0.59 ----
mJ
See Fig. 9, 10, 11, 18
Ets
Total Switching Loss
---- 1.58 1.9
td(on)
Turn-On Delay Time
----
44
----
TJ = 150°C,
See Fig. 9, 10, 11, 18
tr
Rise Time
----
27
----
ns
IC = 27A, VCC = 480V
td(off)
Turn-Off Delay Time
----
240
----
VGE = 15V, RG = 5.0Ω
tf
FallTime
----
130
----
Energy losses include "tail" and
Ets
Total Switching Loss
----
2.3
----
mJ
diode reverse recovery.
LE
Internal Emitter Inductance
----
13
----
nH
Measured 5mm from package
Cies
Input Capacitance
---- 4000 ----
VGE = 0V
Coes
Output Capacitance
----
250
----
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
----
52
----
ƒ = 1.0MHz
trr
Diode Reverse Recovery Time
----
50
75
ns
TJ = 25°C See Fig.
----
105 160
TJ = 125°C
14
IF = 25A
Irr
Diode Peak Reverse Recovery Current
----
4.5
10
A
TJ = 25°C See Fig.
----
8.0
15
TJ = 125°C
15
VR = 200V
Qrr
Diode Reverse Recovery Charge
----
112 375
nC
TJ = 25°C
See Fig.
----
420 1200
TJ = 125°C
16
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
----
250
----
A/µs TJ = 25°C
During tb
----
160
----
TJ = 125°C
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
S 600 ----
----
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ----
V/°C
VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 1.65 2.0
IC = 27A
VGE = 15V
----
2.0
----
V
IC = 55A
See Fig. 2, 5
----
1.6
----
IC = 27A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
----
6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ----
-13
---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
T
16
24
----
S
VCE = 100V, IC = 27A
ICES
Zero Gate Voltage Collector Current
----
----
250
µA
VGE = 0V, VCE = 600V
----
---- 6500
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
----
1.3
1.7
V
IC = 25A
See Fig. 13
----
1.2
1.5
IC = 25A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
----
---- ±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)


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