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IRFP90N20DPBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFP90N20DPBF
Description  SMPS MOSFET
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFP90N20DPBF Datasheet(HTML) 2 Page - International Rectifier

  IRFP90N20DPBF Datasheet HTML 1Page - International Rectifier IRFP90N20DPBF Datasheet HTML 2Page - International Rectifier IRFP90N20DPBF Datasheet HTML 3Page - International Rectifier IRFP90N20DPBF Datasheet HTML 4Page - International Rectifier IRFP90N20DPBF Datasheet HTML 5Page - International Rectifier IRFP90N20DPBF Datasheet HTML 6Page - International Rectifier IRFP90N20DPBF Datasheet HTML 7Page - International Rectifier IRFP90N20DPBF Datasheet HTML 8Page - International Rectifier  
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IRFP90N20DPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
39
–––
–––
S
VDS = 50V, ID = 56A
Qg
Total Gate Charge
–––
180
270
ID = 56A
Qgs
Gate-to-Source Charge
–––
45
67
nC
VDS = 160V
Qgd
Gate-to-Drain ("Miller") Charge
–––
87
130
VGS = 10V,
„
td(on)
Turn-On Delay Time
–––
23
–––
VDD = 100V
tr
Rise Time
–––
160
–––
ID = 56A
td(off)
Turn-Off Delay Time
–––
43
–––
RG = 1.2Ω
tf
Fall Time
–––
79
–––
VGS = 10V
„
Ciss
Input Capacitance
–––
6040 –––
VGS = 0V
Coss
Output Capacitance
–––
1070 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
170
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
8350 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
420
–––
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
870
–––
VGS = 0V, VDS = 0V to 160V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
1010
mJ
IAR
Avalanche Current

–––
56
A
EAR
Repetitive Avalanche Energy

–––
58
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C, IS = 56A, VGS = 0V
„
trr
Reverse Recovery Time
–––
230
340
ns
TJ = 25°C, IF = 56A
Qrr
Reverse RecoveryCharge
–––
1.9
2.8
µC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
94
o
380
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.24 –––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.023
VGS = 10V, ID = 56A
„
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 200V, VGS = 0V
–––
–––
250
VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -30V
IGSS
IDSS
Drain-to-Source Leakage Current


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