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IRFZ44N Datasheet(PDF) 1 Page - NXP Semiconductors

Part # IRFZ44N
Description  N-channel enhancement mode TrenchMOS transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

IRFZ44N Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
N-channel enhancement mode
IRFZ44N
TrenchMOS
TM transistor
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
standard level field-effect power
transistor in a plastic envelope using
V
DS
Drain-source voltage
55
V
’trench’ technology. The device
I
D
Drain current (DC)
49
A
features very low on-state resistance
P
tot
Total power dissipation
110
W
and has integral zener diodes giving
T
j
Junction temperature
175
˚C
ESD protection up to 2kV. It is
R
DS(ON)
Drain-source on-state
22
m
intended for use in switched mode
resistance
V
GS = 10 V
power supplies and general purpose
switching applications.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-
55
V
V
DGR
Drain-gate voltage
R
GS = 20 kΩ
-55
V
±V
GS
Gate-source voltage
-
-
20
V
I
D
Drain current (DC)
T
mb = 25 ˚C
-
49
A
I
D
Drain current (DC)
T
mb = 100 ˚C
-
35
A
I
DM
Drain current (pulse peak value)
T
mb = 25 ˚C
-
160
A
P
tot
Total power dissipation
T
mb = 25 ˚C
-
110
W
T
stg, Tj
Storage & operating temperature
-
- 55
175
˚C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model
-
2
kV
voltage, all pins
(100 pF, 1.5 k
Ω)
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
1.4
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air
60
-
K/W
ambient
d
g
s
12 3
tab
February 1999
1
Rev 1.000


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