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IRFP460 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # IRFP460
Description  PowerMOS transistors Avalanche energy rated
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

IRFP460 Datasheet(HTML) 5 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistors
IRFP460
Avalanche energy rated
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); parameter VDS
Fig.14. Typical switching times; t
d(on), tr, td(off), tf = f(RG)
Fig.15. Normalised drain-source breakdown voltage;
V
(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
Fig.16. Source-Drain diode characteristic.
I
F = f(VSDS); parameter Tj
Fig.17. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tp);
unclamped inductive load
Fig.18. Maximum permissible repetitive avalanche
current (I
AR) versus avalanche time (tp)
PHW20N50E
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
25
50
75
100
125
150
175
200
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 20A
Tj = 25 C
VDD = 400 V
200V
300V
PHW20N50E
0
5
10
15
20
25
30
35
40
45
50
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
Drain-Source Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
PHW20N50E
0
100
200
300
400
500
600
0
5
10
15
20
25
30
Gate resistance, RG (Ohms)
Switching times, td(on), tr, td(off), tf (ns)
td(off)
tr, tf
td(on)
PHW20N50E
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
125 C
VDS
ID
tp
Tj prior to avalanche = 25 C
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
PHW20N50E
0.1
1
10
100
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Maximum Repetitive Avalanche Current, IAR (A)
125 C
Tj prior to avalanche = 25 C
September 1999
5
Rev 1.000


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