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FPD1500DFN_ Datasheet(PDF) 5 Page - Filtronic Compound Semiconductors

Part No. FPD1500DFN_
Description  LOW NOISE HIGH LINEARITY PACKAGED PHEMT
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Manufacturer  FILTRONIC [Filtronic Compound Semiconductors]
Direct Link  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD1500DFN_ Datasheet(HTML) 5 Page - Filtronic Compound Semiconductors

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Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
FPD1500DFN
Datasheet v2.1
TYPICAL I-V CHARACTERISTICS:
Note:
The recommended method for measuring
IDSS, or any particular IDS, is to set the Drain-Source
voltage (VDS) at 1.3V.
This measurement point
avoids the onset of spurious self-oscillation which
would normally distort the current measurement
(this effect has been filtered from the I-V curves
presented above).
Setting the VDS > 1.3V will
generally
cause
errors
in
the
current
measurements, even in stabilized circuits.
Recommendation:
Traditionally a device’s IDSS
rating (IDS at VGS = 0V) was used as a predictor of
RF power, and for MESFETs there is a correlation
between IDSS and P1dB (power at 1dB gain
compression). For pHEMTs it can be shown that
there
is
no
meaningful
statistical
correlation
between
IDSS and P1dB; specifically a linear
regression analysis shows r
< 0.7, and the
regression fails the F-statistic test.
I
2
DSS
is
sometimes useful as a guide to circuit tuning, since
the S22 does vary with the quiescent operating
point IDS.
DC IV Curves FPD750SOT89
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
VG=-1.50
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
5


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