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NFAM1512L7B Datasheet(PDF) 5 Page - ON Semiconductor

Part # NFAM1512L7B
Description  Intelligent Power Module (IPM) Inverter, 1200 V, 15 A
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NFAM1512L7B Datasheet(HTML) 5 Page - ON Semiconductor

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NFAM1512L7B
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ABSOLUTE MAXIMUM RATINGS (VDD = 15 V and Tj = 25°C, Unless Otherwise Specified)
Symbol
Rating
Conditions
Value
Unit
INVERTER PART
VPN
Supply Voltage
Applied between P − NU, NV, NW
900
V
VPN(Surge)
Supply Voltage (Surge)
Applied between P − NU, NV, NW
(Note 1)
1000
V
Vces
Collector − Emitter Voltage
1200
V
VRRM
Maximum Repetitive Revers Voltage
1200
V
±Ic
Each IGBT Collector Current
15
A
±Icp
Each IGBT Collector Current (Peak)
Tc = 25°C, Tj ≤ 150°C,
under 1 ms Pulse Width
30
A
Pc
Corrector Dissipation
Tc = 25°C per one chip (Note 2)
109
W
Tj
Operating Junction Temperature
−40 ~ 150
°C
CONTROL PART
VDD
Control Supply Voltage
Applied between VDD(H), VDD(L) − VSS
20
V
VBS
High−Side Control Bias Voltage
Applied between VB(U) − VS(U),
VB(V) − VS(V), VB(W) − VS(W)
20
V
VIN
Input Signal Voltage
Applied between HIN(U), HIN(V), HIN(W),
LIN(U), LIN(V), LIN(W) − VSS
−0.3 ~ VDD + 0.3
V
VFO
Fault Output Supply Voltage
Applied between VFO − VSS
−0.3 ~ VDD + 0.3
V
IFO
Fault Output Current
Sink Current at VFO pin
2
mA
VCIN
Current Sensing Input Voltage
Applied between CIN − VSS
−0.3 ~ VDD + 0.3
V
TOTAL SYSTEM
VPN(PROT)
Self−Protection Supply Voltage Limit
(Short Circuit Protection Capability)
VDD = VBS = 13.5 ~ 16.5 V, Tj = 150°C,
Non−repetitive, <2 ms
800
V
Tc
Case Operation Temperature
See Figure 1
−40 ~ 125
°C
Tstg
Storage Temperature
−40 ~ 125
°C
Viso
Isolation Voltage
60 Hz, Sinusoidal, AC 1 minute,
Connection Pins to Heat Sink Plate
2500
Vrms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal.
2. Calculation value considered to design factor.
THERMAL CHARACTERISTICS
Symbol
Rating
Conditions
Min
Typ
Max
Unit
Rth(j−c)Q
Junction to Case Thermal
Resistance (Note 3)
Inverter IGBT Part (per 1/6 Module)
1.15
°C/W
Rth(j−c)F
Inverter FWDi Part (per 1/6 Module)
1.80
°C/W
3. For the measurement point of case temperature (Tc), please refer to Figure 1.


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