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IRFS9N60APBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFS9N60APBF
Description  SMPS MOSFET
Download  9 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFS9N60APBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRFS9N60APbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
5.5
––– –––
S
VDS = 25V, ID = 3.1A
Qg
Total Gate Charge
–––
–––
49
ID = 9.2A
Qgs
Gate-to-Source Charge
–––
–––
13
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
20
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
13
–––
VDD = 300V
tr
Rise Time
–––
25
–––
ID = 9.2A
td(off)
Turn-Off Delay Time
–––
30
–––
RG = 9.1Ω
tf
Fall Time
–––
22
–––
RD = 35.5Ω,See Fig. 10
„
Ciss
Input Capacitance
–––
1400 –––
VGS = 0V
Coss
Output Capacitance
–––
180 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
7.1
–––
pF
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
1957 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
49
–––
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
96
–––
VGS = 0V, VDS = 0V to 480V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
290
mJ
IAR
Avalanche Current

–––
9.2
A
EAR
Repetitive Avalanche Energy

–––
17
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.5
V
TJ = 25°C, IS = 9.2A, VGS = 0V
„
trr
Reverse Recovery Time
–––
530 800
ns
TJ = 25°C, IF = 9.2A
Qrr
Reverse RecoveryCharge
–––
3.0
4.4
µC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
9.2
37
A
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.75
RθJA
Junction-to-Ambient (PCB Mounted,steady-state)
–––
40
°C/W
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
600
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.66 –––
V/°C Reference to 25°C, ID = 1mA
†
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.75
VGS = 10V, ID = 5.5.A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
–––
–––
25
µA
VDS = 600V, VGS = 0V
–––
––– 250
VDS = 480V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -30V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current


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