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IRF3703PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF3703PBF
Description  SMPS MOSFET
Download  8 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF3703PBF Datasheet(HTML) 2 Page - International Rectifier

   
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IRF3703PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.028
–––
V/°C Reference to 25°C, ID = 1mA
–––
2.3
2.8
VGS = 10V, ID = 76A
„
–––
2.8
3.9
VGS = 7.0V, ID = 76A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 24V, VGS = 0V
–––
–––
250
VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -200
nA
VGS = -20V
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
150
––– –––
S
VDS = 24V, ID = 76A
Qg
Total Gate Charge
–––
209 –––
ID = 76A
Qgs
Gate-to-Source Charge
–––
62
–––
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
42
–––
VGS = 10V,
„
td(on)
Turn-On Delay Time
–––
18
–––
VDD = 15V, VGS = 10V
tr
Rise Time
–––
123 –––
ID = 76A
td(off)
Turn-Off Delay Time
–––
53
–––
RG = 1.8Ω
tf
Fall Time
–––
24
–––
VGS = 10V
„
Ciss
Input Capacitance
––– 8250 –––
VGS = 0V
Coss
Output Capacitance
––– 3000 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
290 –––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
––– 10360 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
––– 3060 –––
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
––– 2590 –––
VGS = 0V, VDS = 0V to 24V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
1700
mJ
IAR
Avalanche Current

–––
76
A
EAR
Repetitive Avalanche Energy

–––
23
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

––– –––
p-n junction diode.
VSD
Diode Forward Voltage
–––
0.8
1.3
V
TJ = 25°C, IS = 76A, VGS = 0V
„
trr
Reverse Recovery Time
–––
80
120
ns
TJ = 25°C, IF = 76A, VDS = 16V
Qrr
Reverse RecoveryCharge
––– 185 275
nC
di/dt = 100A/µs
„
Diode Characteristics
210
†
1000
A
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m


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