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5962F9582301QYC Datasheet(PDF) 7 Page - Intersil Corporation |
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5962F9582301QYC Datasheet(HTML) 7 Page - Intersil Corporation |
7 / 8 page 7 Test Patterns MARCH (II) PATTERN After a background of zeros is written, each cell (from beginning to end in sequence) is read, written to a one and reread. When the array is full of ones each cell (from the end to the beginning) is read, restored to a zero and reread. After this the pattern is repeated but with complemented data. MASEST PATTERN (Multiple Address Select Pattern) A checkerboard pattern is written into the memory. Then the first cell is read, then its binary address complement is read. The second cell is read and then its binary address complement is read. This pattern of incrementing the address and then reading its binary address complement is repeated until the entire memory is read. This is then repeated but using a checkerboard bar pattern. GALROW PATTERN (Row Galloping Pattern) After a background of zeros is written into the memory a one is written into the first cell. It is then read alternately with each other cell in the row. The test cell is then rewritten back to a zero. The test cell is then incremented and the sequence is repeated until all cells in the memory have been used as a test cell. This is pattern then repeated but using complemented data. GALCOL PATTERN (Column Galloping Pattern) After a background of zeros is written into the memory a one is written into the first cell. It is then read alternately with each other cell in the column. The test cell is then rewritten back to a zero. The test cell is then incremented and the sequence is repeated until all cells in the memory have been used as a test cell. This is pattern then repeated but using complemented data. CHECKERBOARD PATTERN and CHECKERBOARD BAR A checkerboard is written (101010) into the memory and then the pattern is read back. This is then repeated but using complemented data. Irradiation Circuit HS-65647RH (8K x 8 TSOS4 SRAM) 28 LEAD CERAMIC DIP NOTES: 17. VDD = 5.5V ±0.5V R = 10kΩ±10%. 18. Group E sample size is two die/wafer. 28 27 26 25 24 23 22 21 20 19 18 17 16 15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 NC VDD NC A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS VDD E2 A8 A9 A11 A10 DQ7 DQ6 DQ5 DQ4 DQ3 W G E1 HS-65647RH |
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