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SPF-2000 Datasheet(PDF) 2 Page - SIRENZA MICRODEVICES

Part No. SPF-2000
Description  Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation
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Maker  SIRENZA [SIRENZA MICRODEVICES]
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SPF-2000 Datasheet(HTML) 2 Page - SIRENZA MICRODEVICES

   
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http://www.sirenza.com
Phone: (800) SMI-MMIC
2
EDS-103295 Rev A
303 South Technology Court, Broomfield, CO 80021
SPF-2000 Low Noise High Linearity FET
Preliminary
Operation of this device beyond any one of these
parameters may cause permanent damage.
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the operating conditions should also
satisfy the following experssions:
P
DC - P
OUT < (TJ - TL) / RTH
where:
P
DC = I
DS * VDS (W)
P
OUT = RF Output Power (W)
T
J = Junction Temperature (°C)
T
L = Lead Temperature (pin 4) (°C)
R
TH = Thermal Resistance (°C/W)
Absolute Maximum Ratings
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Assembly Instructions:
The recommended die attach is conductive epoxy or AuSn (80/20) solder with limited exposure to
temperatures at or above 300C. The preferred wirebond method is thermo-compression wedge bond
using 0.7 mil gold wire with a maximum stage temperature of 200C. Aluminum wire should not be
used.
Design Data:
Complete design data including S-parameters, noise parameters, and large signal model are
available upon request by contacting applications support at baredie-apps@sirenza.com


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