Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

SPF-2000 Datasheet(PDF) 1 Page - SIRENZA MICRODEVICES

Part No. SPF-2000
Description  Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation
Download  3 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  SIRENZA [SIRENZA MICRODEVICES]
Homepage  
Logo 

SPF-2000 Datasheet(HTML) 1 Page - SIRENZA MICRODEVICES

   
Zoom Inzoom in Zoom Outzoom out
 1 / 3 page
background image
1
EDS-103295 Rev A
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
http://www.sirenza.com
Phone: (800) SMI-MMIC
303 South Technology Court
Broomfield, CO 80021
Preliminary
Sirenza Microdevices’ SPF-2000 is a high linearity, low noise
0.25
µm pHEMT. This 300µm device is ideally biased at 3V,20mA
for lowest noise performance. At 5V,40mA the device delivers
excellent output TOI of 32 dBm. It provides ideal performance
as driver stages in many commercial, industrial and military
LNA applications.
Product Description
SPF-2000
Low Noise High Linearity
pHEMT GaAs FET
0.1 - 12 GHz Operation
Product Features
15 dB Gmax at 12GHz
1.25 dB F
MIN at 12 GHz
+32 dBm Output IP3 at 12GHz
+20 dBm Output Power at 1dB Compression
Applications
High IP3 LNA for VSAT, LMDS, Cellular Systems
and Instrumentation
Broadband Amplifiers
Typical Gain Performance
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Frequency (GHz)
3V, 20mA
5V, 40mA
Gmax
Gain
Sy m b o l
D e vice C h ar ac ter istic s:
T e s t C o ndition s ,
V d s = 3V, Id s = 20 m A , T = 25 °C
(un le s s othe r w is e no te d)
Te s t
F r e q ue nc y
Un its
Min .
Ty p .
Ma x .
Gm a x
Ma xi m u m A va i la b le G a i n [2 ]
Z
S = Z S *, Z L = Z L *1 .9 G H z
4.0 G H z
12 .0 G H z
dB
dB
dB
-
21
13
25
23
15
-
25
17
S
21
In s e rti o n G a in [2 ]
Z
S = Z L = 50 O h m s
1.9 G H z
dB
1 6
18
2 0
NF
MIN
Min i m u m N o i s e F i g u r e
Z
S = G a mma - o p t, Z L = Z L *2 . 0 G H z
4.0 G H z
12 .0 G H z
dB
dB
dB
-
-
-
0.5
0.6
1.2
-
-
-
P
1d B
O u tp u t 1 d B C o m p re s s i o n Po i n t
V
DS = 5 V ,
I
DS = 4 0 m A
V
DS = 3 V ,
I
DS = 2 0 m A
V
DS = 5 V ,
I
DS = 4 0 m A
V
DS = 3 V ,
I
DS = 2 0 m A
2.0 G H z
2.0 G H z
12 .0 G H z
12 .0 G H z
dB m
dB m
dB m
dB m
-
-
-
-
20 .0
15.0
21
18
-
-
-
-
G
1d B
G ain at 1dB C om pres s i on P o i n t
V
DS = 5 V ,
I
DS = 4 0 m A
V
DS = 3 V ,
I
DS = 2 0 m A
V
DS = 5 V ,
I
DS = 4 0 m A
V
DS = 3 V ,
I
DS = 2 0 m A
2.0 G H z
2.0 G H z
12 .0 G H z
12 .0 G H z
dB m
dB m
dB m
dB m
-
-
-
-
17.7
17.0
13.0
11 .0
-
-
-
-
OIP
3
O u tpu t T h ird O rde r In terc ep t P o i n t
V
DS = 5 V ,
I
DS = 40 m A
V
DS = 3 V ,
I
DS = 20 m A
V
DS = 5 V ,
I
DS = 40 m A
V
DS = 3 V ,
I
DS = 20 m A
2.0 G H z
2.0 G H z
12 .0 G H z
12 .0 G H z
dB m
dB m
dB m
dB m
-
-
-
-
32
28
32
30
-
-
-
-
I
DS S
S a tu ra te d D ra i n C u rre n t [2 ]
mA
3 0
8 5
1 4 0
V
P
P in c h off V olta ge [1 ]
V
DS = 2 V ,
I
DS = 0.150 m A
V
-1.5
-1.0
-0 .5
G
M
Tra ns c o nd uc ta nc e
V
GS = - 0.25V
m S
-
1 12
-
BV
GS
G ate to S ou rc e B reak do w n V o ltage [1 ]
I
GS = 0. 3 m A , dr ai n o pen
V
-
-1 7
-8
BV
GD
G ate to D rain B reak do w n V oltage [1]
I
GD = 0 . 3m A , V GS = -3 . 0 V
V
-
-1 7
-8
R
TH
T h e r m a l R e s ista n ce
C/W
1 1 0
V
DS
O pera ti n g V o ltage [3 ]
D ra in - so u rce
V
5 .5
I
DQ
O pera ti n g C u rren t [3 ]
D ra in - so u rce , q u i e sce n t
m A
5 5
P
DIS S
P o w e r D i ssip a ti o n [3 ]
W0 .2
[1] 100% tested - DC parameters tested on wafer.
[2] Sample tested - Samples pullled from each wafer lot. Sample test specifications are based on statistical data from sample test measurements.
[3] V
DS * IDQ < PDISS is recommended for continuous reliable operation.


Html Pages

1  2  3 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn