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MCP601 Datasheet(PDF) 3 Page - Microchip Technology

Part No. MCP601
Description  2.7V to 5.5V Single-Supply CMOS Op Amps
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Maker  MICROCHIP [Microchip Technology]
Homepage  http://www.microchip.com
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MCP601 Datasheet(HTML) 3 Page - Microchip Technology

 
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 2004 Microchip Technology Inc.
DS21314F-page 3
MCP601/2/3/4
FIGURE 1-1:
MCP603 Chip Select (CS)
Timing Diagram.
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.7V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, RL = 100 kΩ to VDD/2 and CL = 50 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Frequency Response
Gain Bandwidth Product
GBWP
2.8
MHz
Phase Margin
PM
50
°
G = +1 V/V
Step Response
Slew Rate
SR
2.3
V/µs
G = +1 V/V
Settling Time (0.01%)
tsettle
4.5
µs
G = +1 V/V, 3.8V step
Noise
Input Noise Voltage
Eni
—7
µVP-P f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—29
nV/
√Hz f = 1 kHz
eni
—21
nV/
√Hz f = 10 kHz
Input Noise Current Density
ini
—0.6
fA/
√Hz f = 1 kHz
MCP603 CHIP SELECT CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.7V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, RL = 100 kΩ to VDD/2 and CL = 50 pF.
Parameters
Sym
Min
Typ
Max
Units
Conditions
DC Characteristics
CS Logic Threshold, Low
VIL
VSS
—0.2 VDD
V
CS Input Current, Low
ICSL
-1.0
µA
CS = 0.2VDD
CS Logic Threshold, High
VIH
0.8 VDD
—VDD
V
CS Input Current, High
ICSH
—0.7
2.0
µA
CS = VDD
Shutdown VSS current
IQ_SHDN
-2.0
-0.7
µA
CS = VDD
Amplifier Output Leakage in Shutdown
IO_SHDN
—1
nA
CS Threshold Hysteresis
HYST
0.3
V
Internal switch
Timing
CS Low to Amplifier Output Turn-on
Time
tON
—3.1
10
µs
CS
≤ 0.2VDD, G = +1 V/V
CS High to Amplifier Output High-Z Time
tOFF
—100
ns
CS
≥ 0.8VDD, G = +1 V/V, No load.
CS
tOFF
VOUT
tON
Hi-Z
Hi-Z
IDD
2 nA (typ.)
230 µA (typ.)
Output Active
ISS
-700 nA (typ.)
-230 µA (typ.)
CS
700 nA (typ.)
2nA (typ.)
Current


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