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SGA-9189 Datasheet(PDF) 2 Page - SIRENZA MICRODEVICES

Part # SGA-9189
Description  Medium Power Discrete SiGe Transistor
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Manufacturer  SIRENZA [SIRENZA MICRODEVICES]
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SGA-9189 Datasheet(HTML) 2 Page - SIRENZA MICRODEVICES

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Broomfield, CO 80021
2
EDS-101497 Rev H
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
SGA-9189 Medium Power Discrete SiGe Transistor
Absolute Maximum Ratings
Typical Performance - Engineering Application Circuits (See AN-021)
Data above represents typical performance of the application circuits noted in Application Note AN-021. Refer to the application
note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing
instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or
call your local sales representative.
Z
SOPT
E
B
C
Z
LOPT
1 P
OUT= +10 dBm per tone for VCE=5V, 1 MHz tone spacing
2 P
OUT= +6 dBm per tone for VCE=3V, 1 MHz tone spacing
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Maximum Recommended Operational
Dissipated Power
0.00
0.20
0.40
0.60
0.80
1.00
1.20
-40
-10
20
50
80
110
140
Lead Temperature (C)
Operational Limit (Tj<130C)
Parameter
Absolute Limit
Max Base Current (IB)
5 mA
Max Device Current (ICE)
200 mA
Max Collector-Emitter Voltage (VCEO)
7 V
Max Collector-Base Voltage (VCBO)
20 V
Max Emitter-Base Voltage (VEBO)
4.8 V
Max. Junction Temp. (TJ)
+150°C
Operating Temp. Range (TL)
See Graph
Max. Storage Temp.
+150°C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
TL=TLEAD
*Note: Load condition, ZL = 50 Ohms


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