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MGFC4419G Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. MGFC4419G
Description  InGaAs HEMT Chip
Download  5 Pages
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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MGFC4419G Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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MGFC4419G
MITSUBISHI SEMICONDUCTOR <GaAs FET>
InGaAs HEMT Chip
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
f
S11
S21
S12
S22
MSG/MAG
K
(GHz)
Magn.
Angle
Magn.
Angle
Magn.
Angle
Magn.
Angle
(dB)
1
0.994
-12.2
5.908
169.6
0.019
82.3
0.660
-8.9
24.9
0.017
2
0.976
-24.3
5.790
159.4
0.037
74.9
0.645
-17.6
21.9
0.038
3
0.950
-36.0
5.608
149.5
0.054
67.7
0.623
-26.0
20.1
0.065
4
0.917
-47.3
5.380
140.0
0.069
61.1
0.595
-34.0
18.9
0.100
5
0.880
-58.1
5.123
131.1
0.083
54.9
0.564
-41.6
17.9
0.143
6
0.842
-68.4
4.854
122.7
0.094
49.3
0.531
-48.7
17.1
0.192
7
0.805
-78.2
4.585
114.8
0.103
44.2
0.498
-55.5
16.5
0.246
8
0.771
-87.6
4.324
107.3
0.111
39.6
0.466
-61.9
15.9
0.304
9
0.739
-96.5
4.076
100.3
0.117
35.4
0.436
-68.1
15.4
0.364
10
0.711
-104.9
3.843
93.7
0.122
31.7
0.407
-74.1
15.0
0.425
11
0.687
-113.1
3.626
87.4
0.127
28.3
0.381
-79.9
14.6
0.486
12
0.666
-120.9
3.426
81.4
0.130
25.3
0.357
-85.6
14.2
0.546
13
0.648
-128.3
3.241
75.7
0.133
22.5
0.335
-91.4
13.9
0.604
14
0.634
-135.5
3.071
70.2
0.136
20.0
0.316
-97.2
13.6
0.660
15
0.622
-142.3
2.914
64.9
0.138
17.7
0.298
-103.0
13.3
0.713
16
0.613
-148.9
2.770
59.8
0.139
15.6
0.283
-109.0
13.0
0.763
17
0.607
-155.2
2.636
54.8
0.141
13.8
0.270
-115.1
12.7
0.810
18
0.603
-161.3
2.513
50.0
0.143
12.0
0.259
-121.4
12.5
0.853
19
0.600
-167.0
2.398
45.3
0.144
10.5
0.250
-127.8
12.2
0.892
20
0.600
-172.6
2.292
40.7
0.145
9.0
0.243
-134.3
12.0
0.927
21
0.601
-177.9
2.193
36.3
0.146
7.7
0.238
-140.9
11.8
0.958
22
0.603
177.0
2.100
31.9
0.148
6.4
0.235
-147.5
11.5
0.984
23
0.606
172.2
2.013
27.7
0.149
5.3
0.234
-154.1
10.8
1.006
24
0.610
167.5
1.931
23.5
0.151
4.2
0.235
-160.6
10.1
1.024
25
0.616
163.0
1.855
19.4
0.152
3.1
0.238
-166.9
9.7
1.037
26
0.621
158.7
1.782
15.4
0.154
2.1
0.242
-173.0
9.3
1.045
Typical Characteristics
S Parameters (Ta=25 deg.C , VDS=2V , ID=10mA )
Noise Parameters (Ta=25 deg.C , VDS=2V , ID=10mA )
f
Gopt.
Rn
NFmin.
Gs
(GHz)
Magn.
Angle
(W)
(dB)
(dB)
4
0.71
33.0
18.0
0.24
18.3
8
0.62
61.1
14.6
0.35
15.9
12
0.55
87.0
12.2
0.45
13.5
18
0.48
123.8
10.3
0.63
9.9
22
0.45
148.1
11.0
0.78
7.5
26
0.45
173.2
12.4
0.98
5.1
as of Jan.'98
(3/4)


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