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TLC271 Datasheet(PDF) 2 Page - Texas Instruments

Part No. TLC271
Description  LinCMOSE PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS
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Maker  TI [Texas Instruments]
Homepage  http://www.ti.com
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TLC271 Datasheet(HTML) 2 Page - Texas Instruments

 
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TLC271, TLC271A, TLC271B
LinCMOS
 PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
DEVICE FEATURES
PARAMETER†
BIAS-SELECT MODE
UNIT
PARAMETER†
HIGH
MEDIUM
LOW
UNIT
PD
3375
525
50
µW
SR
3.6
0.4
0.03
V/
µs
Vn
25
32
68
nV/
√Hz
B1
1.7
0.5
0.09
MHz
AVD
23
170
480
V/mV
† Typical at VDD = 5 V, TA = 25°C
description (continued)
Using the bias-select option, these cost-effective devices can be programmed to span a wide range of
applications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades are
available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV)
low-offset version. The extremely high input impedance and low bias currents, in conjunction with good
common-mode rejection and supply voltage rejection, make these devices a good choice for new
state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available in LinCMOS
 operational amplifiers,
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The
devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and
inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and output are designed to withstand – 100-mA surge currents without sustaining latch-up.
The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000
V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices
as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0
°C to 70°C. The I-suffix devices are characterized
for operation from – 40
°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55
°C to 125°C.
bias-select feature
The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels depending
on the level of performance desired. The tradeoffs between bias levels involve ac performance and power
dissipation (see Table 1).
Table 1. Effect of Bias Selection on Performance
TYPICAL PARAMETER VALUES
MODE
TYPICAL PARAMETER VALUES
TA = 25°C, VDD = 5V
HIGH BIAS
MEDIUM BIAS
LOW BIAS
UNIT
TA = 25 C, VDD = 5 V
RL = 10 kΩ
RL = 100 kΩ
RL = 1 MΩ
PD
Power dissipation
3.4
0.5
0.05
mW
SR
Slew rate
3.6
0.4
0.03
V/
µs
Vn
Equivalent input noise voltage at f = 1 kHz
25
32
68
nV/
√Hz
B1
Unity-gain bandwidth
1.7
0.5
0.09
MHz
φm
Phase margin
46
°
40
°
34
°
AVD
Large-signal differential voltage amplification
23
170
480
V/mV


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