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CED20N06 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CED20N06 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 20A, RDS(ON) = 55mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 60 0.4 60 60 20 ±20 V W A A V W/ C 6 - 30 S G D CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D RDS(ON) = 75mΩ @VGS = 4.5V. High power and current handing capability. TO-251 & TO-252 package. CED20N06/CEU20N06 Lead free product is acquired. 2004.June http://www.cetsemi.com Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 50 2.5 R θJC R θJA |
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