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CEIF634 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEIF634 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 250 0.59 74 32 8.1 ±30 V W A A V W/ C 1 S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEPF634 CEIF634 250V 250V 0.45 Ω 0.45 Ω 8.1A 8.1A 10V 10V 0.3 38 32 d 8.1 d CEBF634 250V 0.45 Ω 8.1A 10V Lead free product is acquired. 2006.July http://www.cetsemi.com CEFF634 250V 0.45 Ω 8.1A d 10V S D G CEI SERIES TO-262(I2-PAK) TO-220/263/262 TO-220F Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1.7 R θJC R θJA 3.3 65 |
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