CER6080 datasheet(4/7 Pages) CET

Part #	CER6080

Description	Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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4 / 7 page

CER6080

4

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V

DS=VGS

I

D=250µA

-50

-25

0

25

50

75

100

125

150

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

N-CHANNEL

5

25

20

15

10

5

0

0.0

0.5

1.0

2.5

1.5

V

GS=3.0V

2.0

V

GS=10,8,6,5V

10

8

6

4

2

0

1.0

2.0

3.0

4.0

0.0

5.0

T

J=125 C

-55 C

25 C

1200

Ciss

Coss

Crss

1000

800

600

400

200

0

6

12

18

24

30

2.2

1.9

1.6

1.3

1.0

0.7

0.4

V

GS=10V

I

D=5.6A

-100

-50

0

50

100

150

200

0.4

0.6

0.8

1.0

10

0

10

-1

10

1

1.4

1.2

V

GS=0V

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