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CEB1175 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEB1175 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page TO-220/263 CEP1175/CEB1175 CEF1175 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM f 650 1.33 167 40 10 ±30 V W A A V W/ C 1 S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP1175 CEF1175 650V 650V 1 Ω 1 Ω 10A 10A e 10V 10V 0.4 50 40 e 10 e CEB1175 650V 1 Ω 10A 10V Lead free product is acquired. http://www.cetsemi.com TO-220F Details are subject to change without notice . Rev 1. 2006.Oct Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 0.75 R θJC R θJA 2.5 65 |
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