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CEP80N75 Datasheet(PDF) 2 Page - Chino-Excel Technology

Part # CEP80N75
Description  N-Channel Enhancement Mode Field Effect Transistor
Download  4 Pages
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Manufacturer  CET [Chino-Excel Technology]
Direct Link  http://www.cetsemi.com
Logo CET - Chino-Excel Technology

CEP80N75 Datasheet(HTML) 2 Page - Chino-Excel Technology

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Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Min
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Forward Transconductance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSR
IGSSF
13
2
4
-100
100
1
V
nA
nA
µ
A
V
S
2
Gate Body Leakage Current, Reverse
On Characteristics b
Dynamic Characteristics c
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-Off Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
Test Condition
VGS = 0V, ID = 250µA
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Typ
Max
75
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 40A
VDS = 15V, ID = 40A
VDD = 37.5V, ID = 45A,
VGS = 10V, RGEN = 4.7Ω
VDS = 60V, ID = 75A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0 MHz
VGS = 0V, IS = 75A
3550
580
40
24
5
61
18
48
10
122
36
79.3
20.6
25.9
105.5
75
1.5
45
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
mΩ
IS g
10
CEP80N75/CEB80N75
CEF80N75
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L =0.87mH, IAS =45A, VDD = 38V, RG = 25Ω, Starting TJ = 25 C .
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
g.Full package IS(max) = 51A .


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