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MMBD1501 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. MMBD1501
Description  Small Signal Diodes
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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MMBD1501 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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MMBD1500 series, Rev. B3
Small Signal Diodes
MMBD1501/A / 1503/A / 1504/A / 1505/A
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
MARKING
MMBD1501 11
MMBD1501A A11
MMBD1503 13
MMBD1503A A13
MMBD1504 14
MMBD1504A A14
MMBD1505 15
MMBD1505A A15
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P
D
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage
200
V
I
F(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
A
T
stg
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
150
°C
1
2
3
11
3
1
2
SOT-23
Connection Diagrams
1501
1503
1504
1505
11
3
2
1
2
2
3
3
3
1
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR = 5.0 µA
200
V
V
F
Forward Voltage
I
F = 1.0 mA
IF = 10 mA
I
F = 50 mA
IF = 100 mA
I
F = 200 mA
I
F = 300 mA
620
720
800
830
0.87
0.90
720
830
890
930
1.1
1.15
mV
mV
mV
mV
V
V
IR
Reverse Current
VR = 125 V
V
R = 125 V, TA = 150°C
VR = 180 V
VR = 180 V, TA = 150°C
1.0
3.0
10
5.0
nA
µA
nA
µA
C
T
Total Capacitance
VR = 0, f = 1.0 MHz
4.0
PF
2NC


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