Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forward Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

105

92

-1

-3

-100

100

-1

Ω

V

nA

nA

µ

A

V

S

4 - 63

Gate Body Leakage Current, Reverse

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Test Condition

Typ

Max

-60

f = 1.0 MHz

720

180

60

11

9

46

22

45

30

150

75

21

3

6

29

-15

-1.3

7

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

150

120

m

Ω

m

CEP20P06/CEB20P06

4

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.