Electronic Components Datasheet Search |
|
CEI04N7 Datasheet(PDF) 1 Page - Chino-Excel Technology |
|
CEI04N7 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page CEP04N7/CEB04N7 CEI04N7/CEF04N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 700 0.71 89 12 4 ±30 V W A A V W/ C 4 - 18 S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP04N7 CEF04N7 700V 700V 3.5 Ω 3.5 Ω 4A 4A d 10V 10V 0.28 35 12 d 4 d CEB04N7 700V 3.5 Ω 4A 10V Lead free product is acquired. 2005.April http://www.cetsemi.com CEI04N7 700V 3.5 Ω 4A 10V S D G CEI SERIES TO-262(I2-PAK) TO-220/263/262 TO-220F Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1.4 R θJC R θJA 3.6 65 |
Similar Part No. - CEI04N7 |
|
Similar Description - CEI04N7 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |