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CEB02N6 Datasheet(PDF) 2 Page - Chino-Excel Technology |
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CEB02N6 Datasheet(HTML) 2 Page - Chino-Excel Technology |
2 / 4 page Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 5.0 3.8 2 4 -100 100 25 Ω V nA nA µ A V S 4 - 3 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD Typ Max 600 VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 1A VDS = 50V, ID = 1A VDD = 300V, ID = 2A, VGS = 10V, RGEN = 18Ω VDS = 480V, ID = 2A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 2A h 250 50 30 18 18 50 16 35 35 90 40 20 2 12 25 2 1.5 1.2 pF pF pF ns ns ns ns nC nC nC A V 4 CEP02N6/CEB02N6 CEI02N6/CEF02N6 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =60mH, IAS =2.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 1.5A . h.Full package VSD test condition IS = 1.5A . |
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