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CEM8968 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEM8968 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 7 page Details are subject to change without notice . 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 30 2.0 28 7 ±20 V W A A V 1 SO-8 1 P-Channel -30 -25 -6.2 ±20 CEM8968 http://www.cetsemi.com 5 Rev 2. 2007.Jan RDS(ON) = 40mΩ @VGS = 4.5V. -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. D1 D1 D2 D2 S1 G1 S2 G2 1 2 3 4 8 7 6 5 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W 62.5 RθJA |
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