CEM8968 datasheet(1/7 Pages) CET

Part #	CEM8968

Description	Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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Manufacturer	CET [Chino-Excel Technology]

Direct Link	http://www.cetsemi.com

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30V, 7A, RDS(ON) = 28mΩ @VGS = 10V.

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Parameter

Symbol

N-Channel

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation

VDS

VGS

ID

PD

IDM

30

2.0

28

7

±20

V

W

A

V

1

SO-8

1

P-Channel

-30

-25

-6.2

±20

CEM8968

http://www.cetsemi.com

5

Rev 2. 2007.Jan

RDS(ON) = 40mΩ @VGS = 4.5V.

-30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V.

RDS(ON) = 52mΩ @VGS = -4.5V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

Surface mount Package.

Lead free product is acquired.

D1

D2

S1

G1

S2

G2

1

2

3

4

8

7

6

5

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient b

Parameter

Symbol

Limit

Units

C/W

62.5

RθJA

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