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CEM6607 Datasheet(PDF) 2 Page - Chino-Excel Technology |
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CEM6607 Datasheet(HTML) 2 Page - Chino-Excel Technology |
2 / 4 page CEM6607 Electrical Characteristics T A = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 86 70 -1 -3 -100 100 -1 m Ω V nA nA µ A V S 2 Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -60 VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -3.8A VGS = -4.5V, ID = -3A VDS = -5V, ID = -3.8A VDD = -30V, ID = -1A, VGS = -10V, RGEN = 6Ω VDS = -30V, ID = -3.5A, VGS = -10V VDS = -30V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -3.8A 1115 115 70 14 7 68 19 28 14 136 38 19 3.1 3.9 25.2 -3.8 -1.2 8 125 95 m Ω pF pF pF ns ns ns ns nC nC nC A V 5 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. |
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