Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forward Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

28

22

1.0

3.0

-100

100

1

mΩ

V

nA

nA

µ

A

V

S

2

Gate Body Leakage Current, Reverse

On Characteristics

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Test Condition

Typ

Max

30

f = 1.0 MHz

610

145

95

9

3

24

4

20

8

50

10

12.3

1.5

2.5

16

2.3

1.2

4

40

30

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

CEM3258

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board, t < 10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.