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CEH3456 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEH3456 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page N-Channel Enhancement Mode Field Effect Transistor CEH3456 FEATURES 30V, 5.5A, RDS(ON) = 42mΩ @VGS = 10V. RDS(ON) = 59mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. ABSOLUTE MAXIMUM RATINGS T A = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 30 2.0 20 5.5 ±20 V W A A V 8 - 38 S(4) G(3) D(1,2,5,6,) Lead free product is acquired. Rev 1. 2005.July http://www.cetsemi.com TSOP-6 3 1 2 4 6 5 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W 62.5 R θJA |
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