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FGD3N60LSDTM Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FGD3N60LSDTM Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  2 www.fairchildsemi.com FGD3N60LSD Rev. B Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGD3N60LSD FGD3N60LSDTM D-PAK 380mm 16mm 2500 Electrical Characteristics of the IGBT T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coefficient of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) G-E Threshold Voltage IC = 3mA, V = VGE 2.5 3.2 5.0 V VCE(sat) Collector to Emitter Saturation Voltage IC = 3A, VGE = 10V -- 1.2 1.5 V IC = 6A, VGE = 10V -- 1.8 -- V Dynamic Characteristics Cies Input Capacitance VCE = 25V, VGE = 0V, f = 1MHz -- 185 -- pF Coes Output Capacitance -- 20 -- pF Cres Reverse Transfer Capacitance -- 5.5 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 480 V, IC = 3A, RG = 470Ω, VGE = 10V, Inductive Load, TC = 25°C -- 40 -- ns tr Rise Time -- 40 -- ns td(off) Turn-Off Delay Time -- 600 -- ns tf Fall Time -- 600 -- ns Eon Turn-On Switching Loss -- 250 -- uJ Eoff Turn-Off Switching Loss -- 1.00 -- mJ Ets Total Switching Loss -- 1.25 -- mJ td(on) Turn-On Delay Time VCC = 480 V, IC = 3A, RG = 470Ω, VGE = 10V, Inductive Load, TC = 125°C -- 40 -- ns tr Rise Time -- 45 -- ns td(off) Turn-Off Delay Time -- 620 -- ns tf Fall Time -- 800 -- ns Eon Turn-On Switching Loss -- 300 -- uJ Eoff Turn-Off Switching Loss -- 1.9 -- mJ Ets Total Switching Loss -- 2.2 -- mJ Qg Total Gate Charge VCE = 480 V, IC = 3A, VGE = 10V -- 12.5 -- nC Qge Gate-Emitter Charge -- 2.8 -- nC Qgc Gate-Collector Charge -- 4.9 -- nC Le Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH CE |
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