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FTT1010-M Datasheet(PDF) 12 Page - NXP Semiconductors |
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FTT1010-M Datasheet(HTML) 12 Page - NXP Semiconductors |
12 / 17 page 1999 September 12 Philips Semiconductors Product specification Frame Transfer CCD Image Sensor FTT1010-M 1 10 100 1000 0 10 2030 4050 60 1 FPN is the one- σ value of the highpass image. 1 Matching of the four outputs is specified as ∆ACF with respect to reference measured at the operating point (Q lin/2). Figure 11 - Dark current versus temperature Dark Current OUTPUT BUFFERS MIN. TYPICAL MAX. UNIT Conversion factor Mutual conversion factor matching ( ∆ACF)1 Supply current Bandwidth Output impedance buffer (R load = 3.3kΩ, Cload = 2pF) 68 0 4 110 400 12 2 µV/el. µV/el. mA MHz Ω DARK CONDITION MIN. TYPICAL MAX. UNIT Dark current level @ 30 ° C Dark current level @ 60 ° C Fixed Pattern Noise 1 (FPN) @ 60 ° C RMS readout noise @ 9MHz bandwidth after CDS 20 0.3 15 25 30 0.6 25 30 pA/cm 2 nA/cm 2 el. el. Temp. (oC) |
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