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FFPF08S60S Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. FFPF08S60S
Description  Stealth 2 Rectifier
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FFPF08S60S Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
April 2007
FFPF08S60S Rev. A
FFPF08S60S
Stealth 2 Rectifier
Features
• High Speed Switching ( Max. trr<30ns @ IF=8A )
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
8A, 600V Stealth 2 Rectifier
The FFPF08S60S is stealth2 rectifier with soft recovery charac-
teristics (trr<30ns). They has half the recovery time of hyperfast
rectifier and are silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as freewheeling of boost diode
in switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
Pin Assignments
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering
1. Cathode 2. Anode
TO-220F-2L
1
1. Cathode
2. Anode
2
Symbol
Parameter
Value
Units
VRRM
Peak Repetitive Reverse Voltage
600
V
VRWM
Working Peak Reverse Voltage
600
V
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current
@ TC = 95 °C8
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
80
A
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
°C
Symbol
Parameter
Max
Units
RθJC
Maximum Thermal Resistance, Junction to Case
3.4
°C/W
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
F08S60S
FFPF08S60STU
TO-220F-2L
-
-
50
TC = 25°C unless otherwise noted
TC = 25°C unless otherwise noted
Information


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