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FDFC2P100 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDFC2P100 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page October 2006 ©2006 Fairchild Semiconductor Corporation FDFC2P100 Rev.C (W) www.fairchildsemi.com 1 FDFC2P100 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -20V, -3A, 150m Ω Features Max rDS(on) = 150mΩ at VGS = -4.5V, ID = -3.0A Max rDS(on) = 200mΩ at VGS = -2.5V, ID = -2.2A Low Gate Charge (3.4nC typ) Compact industry standard SuperSOTTM-6 package Schottky: VF < 0.45 V at IF = 1A RoHS Compliant General Description The FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Significant improvement of Thermal Characteristics and Power Dissipation via replacement of independently connected Schottky with internal connection of Schottky Diode Cathode pn to P-Channel PowerTrench MosFET Drain pin. MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage -20 V VGS Gate to Source Voltage ±12 V ID Drain Current -Continuous (Note 1a) -3 A -Pulsed -6 PD Power Dissipation (Note 1a) (Note 1b) 1.5 0.8 W VRRM Schotty Repetitive Peak Reverse Voltage 20 V IO Schotty Average Forward Current (Note 1a) 1 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJA Thermal Resistance, Junction to Ambient (Note 1a) 87 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1b) 166 Device Marking Device Package Reel Size Tape Width Quantity .100 FDFC2P100 SSOT-6 7” 8mm 3000units 5 1 6 2 3 4 C/D C/D C/D A S G PIN 1 SuperSOTTM-6 |
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