October 2006

©2006 Fairchild Semiconductor Corporation

FDFC2P100 Rev.C (W)

www.fairchildsemi.com

1

FDFC2P100

-20V, -3A, 150m

Ω

Features

Low Gate Charge (3.4nC typ)

Schottky:

RoHS Compliant

General Description

The FDFC2P100 combine the exceptional performance of

Fairchild's PowerTrench MOSFET technology with a very low

forward voltage drop Schottky barrier rectifier in an SSOT-6

package.

This device is designed specifically as a single package solution

for DC to DC converters. It features a fast switching, low gate

charge MOSFET with very low on-state resistance. Significant

improvement of Thermal Characteristics and Power Dissipation

via replacement of independently connected Schottky with

internal connection of Schottky Diode Cathode pn to P-Channel

PowerTrench MosFET Drain pin.

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

-20

V

Gate to Source Voltage

±12

V

Drain Current -Continuous

(Note 1a)

-3

A

-Pulsed

-6

Power Dissipation

(Note 1a)

(Note 1b)

1.5

0.8

W

Schotty Repetitive Peak Reverse Voltage

20

V

Schotty Average Forward Current

(Note 1a)

1

A

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Ambient

(Note 1a)

87

°C/W

Thermal Resistance, Junction to Ambient

(Note 1b)

166

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

.100

FDFC2P100

SSOT-6

7”

8mm

3000units

5

1

6

2

3

4

C/D

C/D

C/D

A

S

G

PIN 1