FDU3N40TU datasheet(3/9 Pages) FAIRCHILD

Part #	FDU3N40TU

Description	400V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FDD3N40 / FDU3N40 Rev. A

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

456

789

10

0

10

1

150

oC

25

oC

-55

oC

* Notes :

1. V

DS = 40V

2. 250µs Pulse Test

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-2

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

* Notes :

1. 250µs Pulse Test

2. T

C = 25

o

C

V

DS, Drain-Source Voltage [V]

01

2

345

6

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

V

GS = 20V

V

GS = 10V

* Note : T

J = 25

o

C

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

10

-1

10

0

10

1

150oC

* Notes :

1. V

GS = 0V

2. 250µs Pulse Test

25

o

C

V

SD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

50

100

150

200

250

300

350

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

01

23

45

0

2

4

6

8

10

12

V

DS = 200V

V

DS = 80V

V

DS = 320V

* Note : I

D = 3A

Q

G, Total Gate Charge [nC]

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