©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDAF59N30 Rev. A

October 2006

UniFET

TM

FDAF59N30

300V N-Channel MOSFET

Features

• Low gate charge ( typical 77 nC)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switched mode power supplies and active power factor

correction.

Absolute Maximum Ratings

Thermal Characteristics

D

G

S

TO-3PF

FDAF Series

G

S

D

Symbol

Parameter

FDAF59N30

Unit

Drain-Source Voltage

300

V

Drain Current

34

20

A

A

Drain Current

- Pulsed

(Note 1)

136

A

Gate-Source voltage

±30

V

Single Pulsed Avalanche Energy

(Note 2)

1734

mJ

Avalanche Current

(Note 1)

34

A

Repetitive Avalanche Energy

(Note 1)

16.1

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate above 25

°C

161

1.3

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Symbol

Parameter

Min.

Max.

Unit

Thermal Resistance, Junction-to-Case

--

0.77

°C/W

Thermal Resistance, Junction-to-Ambient

--

40

°C/W