![]() |
Electronic Components Datasheet Search |
|
CR7929 Datasheet(PDF) 3 Page - NXP Semiconductors |
|
CR7929 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page ![]() 1999 Mar 09 3 Philips Semiconductors Preliminary specification Triple video driver hybrid amplifier CR7929 CHARACTERISTICS VS =85 V; Tmb =25 °C; CL = 10 pF; output swing = 45 V (p-p) with 42.5 V DC offset (see Fig.3); unless otherwise specified. Notes 1. Input signal is a 100 kHz square wave of 3.5 V (p-p) with 850 mV DC offset (50 Ω source), without R level. 2. Sinewave output signal: 1 V (p-p). 3. Measured VO/VI at input test circuit. 4. Measured VO/VI at input module. APPLICATION NOTES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per amplifier IS supply current open input and open output tbd tbd tbd mA Ptot total power dissipation 25 MHz square wave − tbd tbd W tr rise time transient response 10 to 90%; note 1 − 2.2 2.7 ns tf fall time transient response 10 to 90%; note 1 − 1.9 2.3 ns BW small signal bandwidth between −3 dB points; note 2 tbd tbd − MHz Vos overshoot voltage (rise and fall time) adjustable by C1 and C2; see Fig.3 − 810 % NLN non-linearity VO =10to75V − 25% AV DC voltage gain 50 Ω source; note 3 13.8 15 16.2 V/V VG insertion gain 50 Ω source; note 4 tbd tbd tbd V/V Fig.2 Block diagram, single amplifier. handbook, halfpage 4.3 k Ω 150 k Ω 680 pF input output 1.5 V MDA861 VS |