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BCV71 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BCV71 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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©2004 Fairchild Semiconductor Corporation Rev. A, April 2004 Absolute Maximum Ratings * T a=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T a=25°C unless otherwise noted Thermal Characteristics T a=25°C unless otherwise noted Device mounted on FR-4PCB 40mm × 40mm × 1.5mm Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector current (DC) 500 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 ~ +150 °C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 80 V V(BR)CEO Collector-Emitter Breakdown Voltage IC = 2mA, IB = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V ICBO Collector Cutoff Current VCB = 20V, IE = 0 VCB = 20V, IE = 0, Ta = 100°C 100 10 nA µA On Characteristics hFE DC Current Gain IC = 2.0mA, VCE = 5.0V 110 220 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA 0.25 V VBE(on) Base-Emitter On Voltage IC = 2.0mA, VCE = 5.0V 0.55 0.7 V Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25 °C 350 2.8 mW mW/ °C RθJA Thermal Resistance, Junction to Ambient 357 °C/W BCV71 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10. 1. Base 2. Emitter 3. Collector 1 2 3 SOT-23 Mark: K7 |
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