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BZV55-C13 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BZV55-C13
Description  Voltage regulator diodes
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BZV55-C13 Datasheet(HTML) 2 Page - NXP Semiconductors

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2002 Feb 28
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
FEATURES
• Total power dissipation: max. 500 mW
• Two tolerance series: ±2%, and approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
• Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in small hermetically
sealed glass SOD80C SMD packages. The diodes are
available in the normalized E24
±2% (BZV55-B) and
approx.
±5% (BZV55-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
columns
MAM215
ka
Fig.1
Simplified outline (SOD80C) and symbol.
The cathode is indicated by a yellow band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a ceramic substrate of 10
× 10 × 0.6 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
250
mA
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tj =25 °C prior to surge
see Tables 1 and 2 A
Ptot
total power dissipation
Tamb ≤ 50 °C; note 1
400
mW
tie-point
≤ 50 °C; note 1
500
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj =25 °C prior to surge; see Fig.3
40
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−65
+200
°C


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