![]() |
Electronic Components Datasheet Search |
|
CR5527S Datasheet(PDF) 3 Page - NXP Semiconductors |
|
CR5527S Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page ![]() 1995 Apr 05 3 Philips Semiconductors Product specification Triple video driver hybrid amplifier CR5527S CHARACTERISTICS VS = 80 V; Tmb =25 °C; CL = 10 pF; R1 = 348 Ω; C1 = 90 pF; R2 = 82 Ω; C2 = 100 pF; 50 V (p-p) output swing with 40 V DC offset (see Fig.6); unless otherwise specified. Notes 1. Input signal is a 100 kHz square wave of 4.15 V (p-p), with 1.5 V DC offset (50 Ω source). 2. Sinewave output signal: 1 V (p-p). 3. Measured VO/VI (Fig.2) at input test-circuit (see Fig.6). 4. Measured VO/VI (Fig.3) at input module (see Fig.6). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per amplifier IS supply current input and output open 19 25 31 mA Ptot total power dissipation 25 MHz square wave − 9.6 11 W tr rise time transient response 10 to 90%; note 1 − 34ns tf fall time transient response 10 to 90%; note 1 − 2.2 3 ns BW small signal bandwidth between −3 dB points; note 2 100 110 − MHz Vtilt low frequency tilt voltage 10 kHz square wave − 1.3 1.5 V Vos overshoot voltage varied by C1 and C2; see Fig.6 − 310 % NLN non-linearity VO =5to75V − 25% AV DC voltage gain 50 Ω source; note 3 11 12 13 VG insertion gain 50 Ω source; note 4 350 370 390 |