1999 Jul 21

4

Philips Semiconductors

Product specification

DECT 500 mW power amplifier

CGY2032TS

HANDLING

Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model

(HBM)], in accordance with

“MIL STD 883C - method 3015”.

THERMAL CHARACTERISTICS

Note

DC CHARACTERISTICS

AC CHARACTERISTICS

guaranteed on the CGY2032TS evaluation board; the circuit diagram is shown in Fig.5.

Note

1. The device is adjusted to provide nominal value of load power into a 50

Ω load. The device is switched off and a 6 : 1

load replaces the 50

Ω load. The device is switched on and the phase of the 6 : 1 load is varied

360 electrical degrees during a 60 seconds test period.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air; note 1

145

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

positive supply voltage

1.8

3.2

4.2

V

positive peak supply current

−−

800

mA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

input power

−5

0

+5

dBm

δ

duty factor

−

50

100

%

output power

26.5

27.5

29

dBm

total drain current

−−

500

mA

η

efficiency

−

55

−

%

RF leakage to output in power off state

−−40

−35

dBm

H2

second harmonic level

−−−30

dBc

H3

third harmonic level

−−−35

dBc

Stab

stability (spurious levels)

note 1

−−60

−

dBc