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CBT6810PW Datasheet(PDF) 4 Page - NXP Semiconductors |
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CBT6810PW Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page Philips Semiconductors Product specification CBT6810 10-bit bus switch with precharged outputs and Schottky undershoot protection for live insertion 1999 Apr 05 4 RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER LIMITS UNIT SYMBOL PARAMETER Min Max UNIT VCC DC supply voltage 4.0 5.5 V BIASV DC supply voltage 1.3 VCC V VIH High-level input voltage (control pin) 2.0 V VIL Low-level Input voltage (control pin) 0.8 V Tamb Operating free-air temperature range –40 +85 °C DC ELECTRICAL CHARACTERISTICS LIMITS SYMBOL PARAMETER TEST CONDITIONS Tamb = –40°C to +85°C UNIT Min Typ1 Max VIK Input clamp voltage VCC = 4.5V; II = –18mA –1.2 V II Input leakage current (control pin) VCC = 5.5V; VI = GND or 5.5V ± 5 µA IO Output bias current (B pins) VCC = 4.5V; BiasV = 2.4V; VO = 0, OE = VCC –0.25 mA ICC Quiescent supply current VCC = 5.5V; IO = 0, VI = VCC or GND 2.5 mA ∆ICC Control pins2 VCC = 5.5V, one input at 3.4V, other inputs at VCC or GND 2.5 mA CI Control pins VI= 3V or 0 3.5 pF CO(OFF) Terminal capacitance VO = 3V or 0; switch off 9.0 pF 3 VCC = 4.5V; VI = 0V; II = 64mA 5 7 ron3 On-resistance VCC = 4.5V; VI = 0V; II = 30mA 5 7 Ω VCC = 4.5V; VI = 2.4V; II = –15mA 10 15 VP Pass voltage VIN = VCC = 5.0V; Iout = –100µA 3.4 3.6 3.9 V IUSP4 Undershoot static current protection VCC = 5.0V, BiasV = VCC IB = –5µA, VB ≥ 3V –10 mA NOTES: 1. All typical values are at VCC = 5V, TA = 25 C 2. This is the increase in supply current for each input that is at the specified TTL voltage level rather than VCC or GND 3. Measured by the voltage drop between the A and the B terminals at the indicated current through the switch. On–state resistance is determined by the lowest voltage of the two (A or B) terminals. 4. Force IUSP, measure VB ≥ 3V |
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