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BZX79 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BZX79
Description  Voltage regulator diodes
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BZX79 Datasheet(HTML) 2 Page - NXP Semiconductors

 
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2002 Feb 27
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX79 series
FEATURES
• Total power dissipation: max. 500 mW
• Two tolerance series: ±2%, and approx. ±5%
• Working voltage range: nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
• Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24
±2% (BZX79-B) and
approx.
±5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
Fig.1
Simplified outline (SOD27; DO-35) and
symbol.
The diodes are type branded.
handbook, halfpage
MAM239
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
≤ 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
250
mA
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tj =25 °C prior to surge
see Tables 1 and 2 A
Ptot
total power dissipation
Tamb =50 °C; note 1
400
mW
Tamb =50 °C; note 2
500
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj =25 °C prior to surge; see Fig.3
40
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−65
+200
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 10 mA; see Fig.4
0.9
V


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