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BZX55 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BZX55
Description  Voltage regulator diodes
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BZX55 Datasheet(HTML) 2 Page - NXP Semiconductors

   
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1996 Apr 26
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX55 series
FEATURES
• Total power dissipation:
max. 500 mW
• Tolerance series: ±5%
• Working voltage range:
nom. 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
• Low voltage stabilizers or voltage
references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The diodes are available in the normalized E24
±5% tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 to 75 V
(BZX55-C2V4 to BZX55-C75).
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM239
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
≤ 50 °C; lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total series
Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
250
mA
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tj =25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb =50 °C; note 1
400
mW
Tamb =50 °C; note 2
500
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj =25 °C prior to surge
40
W
tp = 8.3 ms; square wave;
Tj ≤ 150 °C prior to surge
30
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF = 100 mA; see Fig.4
1.0
V


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