Electronic Components Datasheet Search

Delete All
ON OFF
 ALLDATASHEET.COM Part No.DescriptionMarking X

## MSK0033 Datasheet(PDF) 3 Page - M.S. Kennedy Corporation

 Part No. MSK0033 Description FET INPUT HIGH SPEED VOLTAGE FOLLOWER/BUFFER AMPLIFIER Download 6 Pages Scroll/Zoom 100% Maker MSK [M.S. Kennedy Corporation] Homepage http://www.mskennedy.com Logo

## MSK0033 Datasheet(HTML) 3 Page - M.S. Kennedy Corporation

 3 / 6 page HEAT SINKINGTo determine if a heat sink is necessary for your applicationand if so, what type, refer to the thermal model and governingequation below.Example:This example demonstrates a worst case analysis for the bufferoutput stage. This occurs when the output voltage is 1/2 thepower supply voltage. Under this condition, maximum powertransfer occurs and the output is under maximum stress.Conditions:VCC = ±16VDCVO = ±8Vp Sine Wave, Freq. = 1KHzRL = 100ΩGoverning Equation:TJ=PD x (RθJC + RθCS + RθSA) + TAWhereTJ = Junction TemperaturePD = Total Power DissipationRθJC = Junction to Case Thermal ResistanceRθCS = Case to Heat Sink Thermal ResistanceRθSA = Heat Sink to Ambient Thermal ResistanceTC = Case TemperatureTA = Ambient TemperatureTS = Sink TemperatureRθSA = ((TJ - TA)/PD) - (RθJC) - (RθCS)= ((125°C - 80°C) / .64W) - 65°C/W - .15°C/W= 70.3 - 65.15= 5.2°C/WThe heat sink in this example must have a thermal resistanceof no more than 5.2°C/W to maintain a junction temperature ofno more than +125°C.Thermal Model:For a worst case analysis we will treat the ±8Vp sine waveas an 8 VDC output voltage.1.) Find Driver Power DissipationPD = (VCC-VO) (VO/RL)= (16V-8V) (8V/100Ω)= 640mW2.) For conservative design, set TJ=+125°C Max.3.) For this example, worst case TA=+80°C4.) RθJC = 65°C/W from MSK 0033B Data Sheet5.) RθCS = 0.15°C/W for most thermal greases6.) Rearrange governing equation to solve for RθSAPOWER SUPPLY BYPASSINGBoth the negative and the positive power supplies must beeffectively decoupled with a high and low frequency bypasscircuit to avoid power supply induced oscillation. An effectivedecoupling scheme consists of a 0.1 microfarad ceramic ca-pacitor in parallel with a 4.7 microfarad tantalum capacitor fromeach power supply pin to ground.APPLICATION NOTESOFFSET VOLTAGE ADJUSTSee Figure 1. To externally null the offset voltage, connect a200Ω potentiometer between Pins 7 and 10 and leave Pin 6open. If offset null is not necessary, short Pin 6 to Pin 7 andremove the 200Ω potentiometer. Do not connect Pin 7 to -Vcc.CURRENT LIMITINGSee Figure 1. If no current limit is required, short Pin 1 to Pin12 and Pin 9 to Pin 10 and delete Q1 thru Q4 connections. Q1through Q4 and the Rlim resistors form a current source currentlimit scheme and current limit resistor values can be calculatedas follows:+Rlim≅ Vbe-Rlim≅ VbeIscIscSince current limit is directly proportional to the base-emittervoltage drop of the 2N2222's and 2N2907's in the currentlimit scheme, the current limit value will change slightly withambient temperature changes. The base-emitter voltage dropwill decrease as temperature increases causing the actual cur-rent limit point to decrease.3Rev. D 9/06

## Related Electronics Part Number

 Part Number Components Description Html View Manufacturer MSK0032 HIGH SPEED FET INPUT DIFFERENTIAL OP-AMP 1 2 3 4 5 M.S. Kennedy Corporation MKP1V120_06 Sidac High Voltage Bidirectional Triggers 0.9 AMPERES RMS 120 − 240 VOLTS 1 2 3 4 5 ON Semiconductor AD8203 High Common-Mode Voltage Single-Supply Difference Amplifier 1 2 3 4 5 More Analog Devices PS2521-1 LARGE FORWARD INPUT TYPE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES 1 2 3 4 5 More California Eastern Labs 2SC5865 Transistors High voltage discharge High speed switching Low Noise 60V 1A 1 2 3 4 5 Rohm LT1055 Precision High Speed JFET Input Operational Amplifiers 1 2 3 4 5 More Linear Technology 2SJ114 HIGH SPEED POWER SWITCHING HIGH FREQUENCY POWER AMPLIFIER 1 2 3 Hitachi Semiconductor MSK0002RH RAD TOLERANT HIGH SPEED BUFFER AMPLIFIER 1 2 3 4 5 More M.S. Kennedy Corporation 2SK296 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 1 Hitachi Semiconductor 2SA2072 High voltage discharge High speed switching Low Noise −60V −3A 1 2 3 4 5 Rohm