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BZG03 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BZG03
Description  Voltage regulator diodes
Download  7 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BZG03 Datasheet(HTML) 2 Page - NXP Semiconductors

  BZG03 Datasheet HTML 1Page - NXP Semiconductors BZG03 Datasheet HTML 2Page - NXP Semiconductors BZG03 Datasheet HTML 3Page - NXP Semiconductors BZG03 Datasheet HTML 4Page - NXP Semiconductors BZG03 Datasheet HTML 5Page - NXP Semiconductors BZG03 Datasheet HTML 6Page - NXP Semiconductors BZG03 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Jun 07
2
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
BZG03 series
FEATURES
• Glass passivatedb
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• UL 94V-O classified plastic
package
• Zener working voltage range:
10 to 270 V for 35 types
• Supplied in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA473
cathode
band
Top view
Side view
,,
,,
,,
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Ptot
total power dissipation
Ttp = 100 °C; see Fig.2
3.00
W
Ptot
total power dissipation
Tamb =50 °C; see Fig.2; device
mounted on an Al2O3 PCB (see Fig.5)
1.25
W
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square pulse;
Tj =25 °C prior to surge; see Fig.3
600
W
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C


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