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BZD27 Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. BZD27
Description  Voltage regulator diodes
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BZD27 Datasheet(HTML) 6 Page - NXP Semiconductors

   
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1996 Jun 10
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD27 series
Note
1. Non-repetitive peak reverse current in accordance with
“IEC 60-1, Section 8” (10/1000
µs pulse); see Fig.8.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm, see Fig.7.
For more information please refer to the
“General Part of associated Handbook”.
BZD27-C180
168
0.09
0.13
5
249
0.60
5
150
BZD27-C200
188
0.09
0.13
5
276
0.54
5
160
BZD27-C220
208
0.09
0.13
2
305
0.50
5
180
BZD27-C240
228
0.09
0.13
2
336
0.45
5
200
BZD27-C270
251
0.09
0.13
2
380
0.40
5
220
BZD27-C300
280
0.09
0.13
2
419
0.36
5
240
BZD27-C330
310
0.09
0.13
2
459
0.33
5
270
BZD27-C360
340
0.09
0.13
2
498
0.30
5
300
BZD27-C390
370
0.09
0.13
2
537
0.28
5
330
BZD27-C430
400
0.09
0.13
2
603
0.25
5
360
BZD27-C470
440
0.09
0.13
2
655
0.23
5
390
BZD27-C510
480
0.09
0.13
2
707
0.21
5
430
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
BZD27-C3V6 to -C6V8
55
K/W
BZD27-C7V5 to -C510
30
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
BZD27-C3V6 to -C6V8
175
K/W
BZD27-C7V5 to -C510
150
K/W
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURREN
T
CLAMPING
VOLTAGE
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
V(BR)R (V)
at Itest
SZ (%/K) at Itest
Itest
(mA)
V(CL)R (V)
at IRSM
(A)
note 1
IR (µA)
at VR
(V)
MIN.
MIN.
MAX.
MAX.
MAX.


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