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BZD23 Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BZD23
Description  Voltage regulator diodes
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BZD23 Datasheet(HTML) 2 Page - NXP Semiconductors

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1996 Jun 10
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD23 series
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
• Zener working voltage range:
3.6 to 270 V for 46 types
• Transient suppressor stand-off
voltage range:
6.2 to 430 V for 45 types
• Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM248
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Ptot
total power dissipation
Ttp =25 °C; lead length 10 mm;
see Figs 2 and 3
BZD23-C3V6 to -C6V8
2.0
W
BZD23-C7V5 to -C510
2.5
W
Ptot
total power dissipation
Tamb =55 °C; see Figs 2 and 3;
PCB mounted (see Fig.7)
BZD23-C3V6 to -C6V8
1.0
W
BZD23-C7V5 to -C510
1.0
W
PZSM
non-repetitive peak reverse
power dissipation
tp = 100 µs; square pulse;
Tj =25 °C prior to surge; see Figs 4 and 5
BZD23-C3V6 to -C6V8
300
W
BZD23-C7V5 to -C510
300
W
PRSM
non-repetitive peak reverse
power dissipation
10/1000
µs exponential pulse (see Fig.8);
Tj =25 °C prior to surge
BZD23-C7V5 to -C510
150
W
Tstg
storage temperature
BZD23-C3V6 to -C6V8
−65
+200
°C
BZD23-C7V5 to -C510
−65
+175
°C
Tj
junction temperature
BZD23-C3V6 to -C6V8
−65
+200
°C
BZD23-C7V5 to -C510
−65
+175
°C


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