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BZD23 Datasheet(PDF) 6 Page - NXP Semiconductors

Part No. BZD23
Description  Voltage regulator diodes
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BZD23 Datasheet(HTML) 6 Page - NXP Semiconductors

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1996 Jun 10
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZD23 series
Note
1. Non-repetitive peak reverse current in accordance with
“IEC 60-1, Section 8” (10/1000
µs pulse); see Fig.8.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm, see Fig.7.
For more information please refer to the
“General Part of associated Handbook”.
BZD23-C180
168
0.09
0.13
5
249
0.60
5
150
BZD23-C200
188
0.09
0.13
5
276
0.54
5
160
BZD23-C220
208
0.09
0.13
2
305
0.50
5
180
BZD23-C240
228
0.09
0.13
2
336
0.45
5
200
BZD23-C270
251
0.09
0.13
2
380
0.40
5
220
BZD23-C300
280
0.09
0.13
2
419
0.36
5
240
BZD23-C330
310
0.09
0.13
2
459
0.33
5
270
BZD23-C360
340
0.09
0.13
2
498
0.30
5
300
BZD23-C390
370
0.09
0.13
2
537
0.28
5
330
BZD23-C430
400
0.09
0.13
2
603
0.25
5
360
BZD23-C470
440
0.09
0.13
2
655
0.23
5
390
BZD23-C510
480
0.09
0.13
2
707
0.21
5
430
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
BZD23-C3V6 to -C6V8
87
K/W
BZD23-C7V5 to -C510
60
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
BZD23-C3V6 to -C6V8
145
K/W
BZD23-C7V5 to -C510
120
K/W
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
REVERSE CURRENT
at STAND-OFF
VOLTAGE
V(BR)R (V)
at Itest
SZ (%/K) at Itest
Itest
(mA)
V(CL)R (V)
at IRSM
(A)
note 1
IR (µA)
at VR
(V)
MIN.
MIN.
MAX.
MAX.
MAX.


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