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BZA420A Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BZA420A
Description  Quadruple ESD transient voltage suppressor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BZA420A Datasheet(HTML) 2 Page - NXP Semiconductors

 
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1999 May 20
2
Philips Semiconductors
Product specification
Quadruple ESD transient voltage suppressor
BZA420A
FEATURES
• ESD rating >8 kV, according to IEC1000-4-2
• SOT457 surface mount package
• Common anode configuration
• Non-clamping range −0.5 to 20 V
• Maximum reverse peak power dissipation:
19.6 W at tp =1ms
• Maximum clamping voltage at peak pulse current:
28 V at IZSM = 0.7 A.
APPLICATIONS
• Computers and peripherals
• Audio and video equipment
• Communication systems
• Medical equipment.
DESCRIPTION
Monolithic transient voltage suppressor diode in a six lead
SOT457 (SC-74) package for 4-bit wide ESD transient
suppression at 20 V level.
PINNING
PIN
DESCRIPTION
1
cathode 1
2
common
3
cathode 2
4
cathode 3
5
common
6
cathode 4
Fig.1 Simplified outline (SOT457) and symbol.
handbook, halfpage
13
2
4
5
6
1
3
4
6
2
5
Top view
MAM357
Marking code: Z0.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Ts is the temperature at the soldering point of the anode pin.
2. DC working current limited by Ptot max.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
IZ
working current
Ts =60 °C; note 1
note 2
mA
IF
continuous forward current
Ts =60 °C
100
mA
IFSM
non-repetitive peak forward
current
tp = 1 ms; square pulse
3.75
A
IZSM
non-repetitive peak reverse
current
tp = 1 ms; square pulse; see Fig.2
0.7
A
Ptot
total power dissipation
Ts =60 °C; see Fig.3
720
mW
PZSM
non repetitive peak reverse power
dissipation
square pulse; tp = 1 ms; see Fig.4
19.6
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C


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