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NUP8020X6T1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NUP8020X6T1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page NUP8020X6 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (Note 2) VRWM − 5.0 V Breakdown Voltage IT = 1 mA, (Note 3) VBR 6.2 6.8 7.2 V Reverse Leakage Current VRWM = 3 V IR − 0.01 0.5 mA Capacitance VR = 0 V, f = 1 MHz (Line to GND) VR = 2.5 V, f = 1 MHz (Line to GND) CJ − 54 70 pF 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. |
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