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BYW95 Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BYW95
Description  Fast soft-recovery controlled avalanche rectifiers
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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BYW95 Datasheet(HTML) 3 Page - NXP Semiconductors

   
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1996 Jun 07
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYW95 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm, see Fig.11.
For more information please refer to the
“General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 5 A; Tj =Tj max; see Fig.8
−−
1.25
V
IF = 5 A; see Fig.8
−−
1.50
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYW95A
300
−−
V
BYW95B
500
−−
V
BYW95C
700
−−
V
IR
reverse current
VR =VRRMmax;
see Fig.9
−−
1
µA
VR =VRRMmax; Tj = 165 °C;
see Fig.9
−−
150
µA
trr
reverse recovery time
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig.12
−−
250
ns
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig.10
85
pF
maximum slope of
reverse recovery current
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1A/µs;
see Fig.13
−−
7A/
µs
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
dI
R
dt
--------


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